| OPENING SESSION |
|---|
| 1. Opening Address | |
| H. KAWAMURA | 3 |
| 2. Opening Address | |
| L. SOSNOWSKI | 5 |
| 3. Welcome Address | |
| K. HUSIMI | 7 |
| 4. Opening Address | |
| T. OGUCHI | 9 |
| PLENARY SESSION |
|---|
| 1. Pseudopotential Theory for Surface and Bulk Properties of Semiconductors | |
| M. L. COHEN | 13 |
| 2. Light Scattering by Free Electrons and Electron-Phonon Coupled Modes in Semiconductors | |
| M. CARDONA | 23 |
| 3. Impurity Conduction in Germanium and Silicon | |
| W. SASAKI | 31 |
| 4. Defects in Semiconducting Chalcogenide Glasses | |
| H. FRITZSCHE | 39 |
| SPECIAL SESSION |
|---|
| 1. The Role of Oxygen and Carbon in Silicon Crystals in VLSI Technology | |
| S. KISHINO | 49 |
| 2. Degradation in III-V Opto-Electronic Devices | |
| I. HAYASHI | 57 |
| I: MANY BODY PROBLEM AND BAND STRUCTURE |
|---|
| 1. Many-Body Effects in the Optical Spectra of Semiconductors (Invited) | |
| L. J. SHAM | 69 |
| 2. First-Principle Calculation of Self-Energy Corrections in Covalent Crystals | |
| G. STRINATI, H. J. MATTAUSCH and W. HANKE | 77 |
| 3. Self Consistent Ground State and Optical Properties of Thallous Halides | |
| W. SCHÄFER, M. SCHREIBER and J. TREUSCH | 81 |
| 4. Electronic Structure of Black Phosphorus | |
| H. ASAHINA, A. MORITA and K. SHINDO | 85 |
| 5. Equivalence between the Overlap Reduced Semiempirical Tight Binding and the Chemical Pseudopotential Methods in Band Structure Calculations: A New Simple Approach to Wave-Function Localization in Crystals | |
| E. DONI, R. GIRLANDA and L. RESCA | 89 |
| 6. Energy Bands and Optical Properties of the Random Defect Semiconductors Ga2S3, Ga2Se3, Ga2Te3 and In2Te3 | |
| G. GUIZZETTI, F. MELONI and A. BALDERESCHI | 93 |
| 7. Study on the Effect of the Coulomb Interaction on Superconductivity and its Application to n-Type Semiconducting SrTiO3 | |
| Y. TAKADA | 97 |
| 8. Loss Anisotropy and Plasmon Bands in Covalent Semiconductors | |
| L. E. OLIVEIRA and K. STURM | 101 |
| 9. Core Level Shifts in Group IV Semiconductors and Semimetals | |
| SOE YIN and E. TOSATTI | 105 |
| 10. Final-State Interactions in Core Excitations in III-V Semiconductors | |
| D. E. ASPNES, S. M. KELSO, C. G. OLSON, D. W. LYNCH and D. FINN | 109 |
| 11. Spectroscopy of the L Band of Ga-Sb Studied by Shubnikov-de-Haas Effect in High Magnetic Field, under Uniaxial Stress | |
| P. PERRIER, J. C. PORTAL, J. GALIBERT and S. ASKENAZY | 113 |
| 12. Inversion of the Γ and L Conduction Bands of GaSb(Te) Under Hydrostatic Pressure | |
| N. B. BRANDT, V. V. MOSHCHALKOV, A. S. RYLIK and S. M. CHUDINOV | 117 |
| 13. The Relativistically Corrected Band Edges of Trigonal Te at the Corner Point H | |
| J. VON BOEHM and H. ISOMÄKI | 121 |
| 14. Experimental Investigation of the Non-Parabolicity of Light Hole Band in Germanium | |
| V. F. GANTMAKHER and V. N. ZVEREV | 125 |
| 15. Hydrostatic Pressure Dependence of the Photoluminescence in Heavily Doped GaAs | |
| D. OLEGO, M. CARDONA and H. MÜLLER | 129 |
| 16. Photoemission from Electronically Excited Semiconductors | |
| W. EBERHARDT, R. BRICKMAN and A. KALDOR | 133 |
| 17. Angular Resolved Photoemission and Band Structure of Layered Transition Metal Dichalcognides | |
| W. DRUBE, G. KARSCHNICK, M. SKIBOWSKI, R. THIES and K. VÖLKERT | 137 |
| 18. Electronic Structure of NaxWo3 Near the Metal-Semiconductor Transition | |
| H. HÖCHST, R. D. BRINGANS and H. R. SHANKS | 141 |
| 19. Semiconductor Band Structure Information from Angular Dependent Electron Energy Loss Measurements | |
| R. D. BRINGANS and W. Y. LIANG | 145 |
| 20. Angular Resolved UV Photoemission of the PbTe(111) Surface | |
| H. HÖCHST, L. LEY and M. CARDONA | 149 |
| II: SHALLOW IMPURITY STATES |
|---|
| 1. Local Field Effects in Semiconductors (Invited) | |
| A. BALDERESCHI | 155 |
| 2. Central Cell Effects in the Shallow Acceptor Spectra of Si and Ge | |
| N. O. LIPARI, M. L. W. THEWALT, W. ANDREONI and A. BALDERESCHI | 165 |
| 3. Ge Donors in GaP and the Role of Higher Band Minima in Impurity Theory | |
| M. ALTARELLI | 169 |
| 4. D- States in Germanium and Silicon (Invited) | |
| S. NARITA | 173 |
| 5. Stress-Induced Shifts of Shallow Donor Polarizabilities in n-Type Silicon | |
| H. S. TAN and T. G. CASTNER | 181 |
| 6. Study of Donor Species in ZnSe and ZnTe with a New Photoluminescence Technique | |
| P. J. DEAN, D. C. HERBERT and A. M. LAHEE | 185 |
| 7. Zeeman Splitting of Ground and Excited Impurity States in ZnTe | |
| H. TEWS | 189 |
| 8. Excitation and Relaxation Processes of Donor-Acceptor Pairs in ZnTe under Selective Excitation | |
| S. NAKASHIMA and A. NAKAMURA | 193 |
| 9. Effect of Magnetic Field on the Valley-Orbit Split ls States of Shallow Donors in Germanium | |
| R. L. AGGARWAL, R. PEOPLE, P. A. WOLFF and D. M. LARSEN | 197 |
| 10. Piezospectroscopy of Lithium Donors in Silicon | |
| C. JAGANNATH and A. K. RAMDAS | 201 |
| III: DEEP IMPURITY STATES |
|---|
| 1. Strong Lattice Relaxation at Localized Defects (Invited) | |
| J. M. LANGER | 207 |
| 2. The Role of the Lattice in Deep Levels and Nonradiative Recombinations (Invited) | |
| D. V. LANG | 215 |
| 3. Zero-Phonon Structure of N Trap States in GaAs1-xPx Alloys | |
| D. J. WOLFORD, B. G. STREETMAN and J. THOMPSON | 223 |
| 4. Adiabatic and Non-Adiabatic Limits for Multi-Phonon Capture of Free Electrons by Deep Centers | |
| H. SUMI | 227 |
| 5. Theory of the Silicon Vacancy: an "Anderson Negative U" System (Invited) | |
| G. A. BARAFF, E. O. KANE and M. SCHLÜTER | 231 |
| 6. Theory of Deep Impurities and Defects in Semiconductors (Invited) | |
| S. T. PANTELIDES, J. BERNHOLC and N. O. LIPARI | 235 |
| 7. Optical Cross Sections of Deep Levels in Semiconductors | |
| P. W. BANKS, S. BRAND and M. JAROS | 243 |
| 8. Deep Level Optical Spectroscopy in GaAs | |
| A. CHANTRE and D. BOIS | 247 |
| 9. Contribution of Dipole Defects to DLTS Spectrum | |
| J. A. VAN VECHTEN, C. M. RANSOM and T. I. CHAPPELL | 251 |
| 10. Calorimetric Absorption Spectroscopy (CAS) of GaP:N, S | |
| A. BUBENZER and D. BIMBERG | 255 |
| 11. Excited Donor States in Sulfur and Selenium Doped Silicon | |
| H. G. GRIMMEISS, E. JANZÉN and B. SKARSTAM | 259 |
| 12. Photoluminescene from Deep States Associated with Iron in Silicon | |
| J. WEBER and P. WAGNER | 263 |
| 13. Internal Radiative Transitions on the Second and Third Transition Series Ions in GaAs and GaP | |
| V. S. VAVILOV, V. V. USHAKOV and A. A. GIPPIUS | 267 |
| 14. Magnetic Freeze-out on the Subsidiary Minima Associated Levels in n-InSb under Pressure | |
| S. POROWSKI, L. KOŃCZEWICZ, M. KOŃCZYKOWSKI, R. AULOMBARD and J. L. ROBERT | 271 |
| 15. Cluster Calculations of Transition-Metal Impurities in Semiconductors | |
| C. M. MÜLLER, U. SCHERZ and C.-M. LIEGENER | 275 |
| 16. The Magnetic Field and Uniaxial Stress Dependence of the Cr-Related Photoluminescence of GaP(Cr) | |
| L. EAVES, TH. ENGLERT, CH. UIHLEIN and P. J. WILLIAMS | 279 |
| 17. Charge Transfer Cr2+(d4)→Cr1+(d5)Induced by Hydrostatic Pressure in Chromium Doped GaAs | |
| A. M. HENNEL and G. MARTINEZ | 283 |
| 18. Phonon Assisted Tunnel Emission of Electrons from the Cr Level in GaAs | |
| S. MAKRAM-EBEID, G. M. MARTIN and D. W. WOODARD | 287 |
| IV: TRANSPORT |
|---|
| 1. Electron Scattering at Localized Impurity Potentials in GaAs | |
| D. CHATTOPADHYAY, H. J. QUEISSER and G. B. STRINGFELLOW | 293 |
| 2. Linewidth of Phonon-Assisted Cyclotron Resonance Induced by Shallow Neutral Donors in the Quantum Limit and Cyclotron Resonance Harmonics Induced by Deep Neutral Donors in n-InSb | |
| S. MORITA, M. IKEDA, Y. TAKEUTI and N. MIKOSHIBA | 297 |
| 3. Magnetic Freeze-Out in n-Type Hg1-xCdxTe(0.18<x<0.34): The Metal-Nonmetal Transition | |
| A. RAYMOND, RL. AULOMBARD, L. KONCZEWICZ, C. BOUSQUET, JL. ROBERT and M. ROYER | 301 |
| 4. Freeze-out Effect and Longitudinal Magnetoresistance of Graphite in Quantum Limit | |
| K. SUGIHARA | 305 |
| 5. Seebeck Effect in Superconducting BaPb1-xBixO3 System | |
| T. TANI, T. ITOH and S. TANAKA | 309 |
| 6. Experiments Concerning the Magnetic Field Induced Wigner Condensation | |
| G. NIMTZ and B. SCHLICHT | 313 |
| 7. Microscopic Models in Hot Electron Phenomena (Invited) | |
| L. REGGIANI | 317 |
| 8. Analysis of Hot Electron Transport Using Experimentally Obtained Distribution Functions | |
| N. TAKENAKA, M. INOUE and Y. INUISHI | 325 |
| 9. Cold Electron Photo-Injection in Degenerate n-InSb at 1.8 K | |
| D. G. SEILER and L. K. HANES | 329 |
| 10. Kinetics of Bound Electrons in Si: P | |
| P. LAWAETZ and W. G. PROCTOR | 333 |
| 11. Negative Differential Conductivity in the Case of Electron Scattering by Optical Phonons at Low Temperatures | |
| A. CHENIS and A. MATULIS | 337 |
| 12. Theory of Streaming Motion of Hot Polarons in Silver Halides | |
| J. T. DEVREESE, F. BROSENS, R. EVRARD and E. KARTHEUSER | 341 |
| 13. Theory of Cyclotron Resonance at Intense Microwave Fields | |
| T. KUROSAWA | 345 |
| 14. Resonant Enhancement of Intrinsic Impact Ionization Involving Spin-Orbit Split-off Valence Band States | |
| O. HILDEBRAND, W. KUEBART, J. LUTZ and K. W. BENZ | 349 |
| 15. Stark Ladder Resonance in ZnS | |
| N. SAWAKI and T. NISHINAGA | 353 |
| V: IMPURITY CONDUCTION |
|---|
| 1. Structure of Impurity Band and Hopping Conduction (Invited) | |
| A. L. EFROS and B. I. SHKLOVSKII | 359 |
| 2. Transition Rates for Correlated Multi-electron Hopping | |
| M. POLLAK | 367 |
| 3. Excitonic Effects on Optical Transitions to a D- Band in Doped Semiconductors | |
| N. GEMMA, A. NATORI and H. KAMIMURA | 371 |
| 4. Theory of Negative Magnetoresistance in Doped Semiconductors | |
| A. KAWABATA | 375 |
| 5. Anomalous Temperature Dependence of the Resistivities in n-InSb below 100 mK | |
| S. MORITA, T. FUKASE, Y. ISAWA, S. ISHIDA, Y. TAKEUTI and N. MIKOSHIBA | 379 |
| 6. Theory of Resistance and Hall Maxima in Sb-Doped Ge in the Metallic Range | |
| T. SASO and T. KASUYA | 383 |
| VI: EXCITON AND POLARITON |
|---|
| 1. Determination of Dispersion Curves of Excitonic Polariton in CdS | |
| Y. SEGAWA, Y. AOYAGI, T. BABA and S. NAMBA | 389 |
| 2. Picosecond Time of Flight Measurements of Excitonic Polaritons | |
| Y. MASUMOTO, Y. UNUMA and S. SHIONOYA | 393 |
| 3. Observation of Modified Exciton-Polariton Behavior Near a Semiconductor Surface | |
| J. LAGOIS | 397 |
| 4. Two New Methods of Polariton Spectroscopy Tested with CdS: Magneto Brillouin Scattering, Thin Prism Refraction | |
| I. BROSER, M. ROSENZWEIG, R. BROSER, E. BEKMANN and E. BIRKICHT | 401 |
| 5. Two-Photon Spectroscopy on Even Parity Excitons | |
| D. FRÖHLICH, R. KENKLIES and CH. UIHLEIN | 405 |
| 6. Magneto-Optic Effects in the Exciton Absorption Spectra Observed in Megagauss Fields | |
| N. MIURA, G. KIDO, H. KATAYAMA and S. CHIKAZUMI | 409 |
| 7. Masses and Oscillator Strengths of Wannier Excitons in Polar Semiconductors | |
| M. MATSUURA and H. BÜTTNER | 413 |
| 8. Anderson Transition in Vibronic Exciton Bands of Isotopically Mixed Naphthalene Crystals | |
| Y. TOKURA, T. KODA and I. NAKADA | 417 |
| 9. New Queues of Time-Resolved Luminescence Lines from Excitonic Molecules in AgClxBr1-x | |
| M. KAWAHARA and T. MASUMI | 421 |
| 10. Systematics of Silicon Acceptor Bound Excitons in Magnetic and Uniaxial Stress Fields | |
| J. WEBER, H. CONZELMANN and R. SAUER | 425 |
| 11. Optical Gain/Absorption and Fano Interference in High Density Exciton System in CuCl | |
| J. M. HVAM and A. BIVAS | 429 |
| 12. The Fano Effect in the Bound Exciton Spectra of ZnSe | |
| A. KASUYA, T. GOTO, Y. NISHINA, S. SATOH and K. IGAKI | 433 |
| 13. High Frequency Modulation Spectroscopy of Bound Multiexciton Complexes | |
| M. L. W. THEWALT | 437 |
| 14. Even Parity Excited Donor States in Germanium from Bound Exciton Two-Electron Transitions | |
| A. E. MAYER and E. C. LIGHTOWLERS | 441 |
| 15. Valley-Orbit Splitting of the Nitrogen-Bound Exciton in GaP:N | |
| H. MATHIEU, L. BAYO, J. CAMASSEL, P. MERLE and A. RAYMOND | 445 |
| 16. A Study of the Phonon Sidebands in Emission Spectra of GaAs1-xPx:N | |
| H. CHANG, C. HIRLIMANN, M. KANEHISA and M. BALKANSKI | 449 |
| 17. Theory of Bound Multi-Exciton Complexes in Phosphorous Doped Silicon | |
| H. B. SHORE and R. S. PFEIFFER | 453 |
| 18. Ground-State Energy of a Donor-Bound Exciton Complex in Semiconductors | |
| K. K. BAJAJ, T. D. CLARK and W. M. THEIS | 457 |
| 19. Dynamical Behaviour of Exciton System in Silicon | |
| T. OHYAMA | 461 |
| 20. New Experimental Results on Biexciton Formation in Silicon | |
| W. SCHMID, A. FORCHEL, G. MÖRSCH and M. H. PILKUHN | 465 |
| 21. Exciton-Capture and Auger-Recombination Rates of Bound Multiexciton Complexes in Silicon | |
| H. NAKAYAMA, T. NISHINO and Y. HAMAKAWA | 469 |
| 22. Kinetics of Excitons, Biexcitons and Free Carriers in Si | |
| P. L. GOURLEY and J. P. WOLFE | 473 |
| VII: ELECTRON-HOLE LIQUID AND PLASMA |
|---|
| 1. New Mechanism of Electron-Hole Droplet Instability | |
| YU. A. BYCHKOV, S. V. IORDANSKII and E. I. RASHBA | 479 |
| 2. Origin of Far-Infrared Magneto-Oscillations of Electron-Hole Drop in Ge | |
| H. NAKATA and E. OTSUKA | 483 |
| 3. Insulator-Metal Transition of Free Excitons to Electron-Hole Plasmas in Silicon | |
| A. FORCHEL, B. LAURICH, W. SCHMID and M. H. PILKUHN | 487 |
| 4. Effect of Phonon Flux Sigularities on the Cloud of Electron-Hole Droplets | |
| J. P. WOLFE, M. GREENSTEIN and G. A. NORTHROP | 491 |
| 5. Drag of Electron-Hole Droplets in Germanium by Laser Induced Deformation Pulse | |
| V. S. BAGAEV, M. M. BONCH-OSMOLOVSKY, T. I. GALKINA, L. V. KELDYSH and A. G. POYARKOV | 495 |
| 6. Calculations of the Critical Points and Ground States for Electron-Hole Droplet Condensation in SiC, GaP and AlAs | |
| T. L. REINECKE and D. BIMBERG | 499 |
| 7. The Electron-Hole Plasma in Direct II-VI Compounds | |
| H. HAUG, D. B. TRAN THOAI, S. SCHMITT-RINK, K. BOHNERT, C. KLIGSHIRN and G. BLATTNER | 503 |
| 8. Highly Doped CdS: Optical Properties and High Excitation Phenomena | |
| G. O. MÜLLER, M. RÖSLER and R. ZIMMERMANN | 507 |
| 9. Picosecond Spectroscopy of Highly Excited Electronic States in Narrow Gap Semiconductors | |
| A. V. NURMIKKO and B. D. SCHWARTZ | 511 |
| 10. E-H Plasma Luminescence in GaAs1-xPx Above Direct-Indirect Crossover | |
| S. MODESTI, A. FROVA, M. CAPIZZI, L. G. QUAGLIANO, J.-L. STAEHLI and M. GUZZI | 515 |
| 11. Wavelength Modulated Absorption in SiC Polytypes | |
| R. G. HUMPHREYS, D. BIMBERG and W. I. CHOYKE | 519 |
| 12. Optical Studies on the Exciton Electron-Hole Plasma System in Highly Excited GaAs | |
| K. M. ROMANEK, E. O. GÖBEL, H. CONZELMANN and H. NATHER | 523 |
| 13. The Partial Composition of a Dense Electron-Hole System and the Exciton-Plasma Transition in Uniaxially Stressed Silicon | |
| V. D. KULAKOVSKII, I. V. KUKUSHKIN and V. B. TIMOFEEV | 527 |
| VIII: RESONANT RAMAN SCATTERING |
|---|
| 1. Study of Exciton Polaritons by Resonant Light Scattering Techniques (Invited) | |
| P. Y. YU | 533 |
| 2. Resonant Raman Scattering at the Exciton-Polariton in TlBr | |
| H. STOLZ and W. VON DER OSTEN | 543 |
| 3. Resonant Brillouin Scattering of Excitonic Polaritons in CuBr | |
| Y. OKA and DUY-PHACH VU | 547 |
| 4. Resonance Raman Scattering in Transition-Metal Dichalcogenides | |
| T. SEKINE, T. NAKASHIZU, M. IZUMI, K. TOYODA, K. UCHINOKURA and E. MATSUURA | 551 |
| 5. Resonance Raman Scattering at the Indirect Gap of Gallium Phosphide | |
| M. UDAGAWA, S. USHIODA, D. E. FORSYTH and J. B. VALDEZ | 555 |
| 6. Hyper-Raman Scattering in CdS and ZnO in Strong Magnetic Fields | |
| G. KURTZE, W. MAIER, K. KEMPF, G. SCHMIEDER, H. SCHREY, C. KLINGSHIRN, B. HÖNERLAGE and U. RÖSSLER | 559 |
| 7. Hyper-Raman Scattering via Biexcitons (Invited) | |
| J. B. GRUN | 563 |
| IX: OPTICAL AND NONLINEAR OPTICAL PROPERTIES |
|---|
| 1. Spectrum and Polarization of Hot Luminescence in GaAs Crystals | |
| B. P. ZAKHARCHENYA, V. D. DYMNIKOV, I. YA. KARLIK, D. N. MIRLIN, L. P. NIKITIN, V. I. PEREĹ, I. I. RESHINA and V. F. SAPEGA | 573 |
| 2. Raman Scattering from Conduction Electrons in KTaO3 | |
| H. UWE, K. OKA, H. UNOKI and T. SAKUDO | 577 |
| 3. Analysis of Polymorphic Properties of ZnS (Mn) by Laser Spectroscopy | |
| W. BUSSE, H.-E. GUMLICH, W. KNAAK and J. SCHULZE | 581 |
| 4. Polarization and Propagation Effects in Active Non Linear Spectroscopy of Solids: Features of the Mulitiple Resonances on Excitons and Excitonic Molecules | |
| A. MARUANI and D. S. CHEMLA | 585 |
| 5. Time Resolved Resonant Two-Photon Absorption Spectroscopy in Cu2O | |
| A. MYSYROWICZ, D. HULIN, A. MIGUS, J. L. MARTIN, R. ASTIER and A. ANTONETTI | 589 |
| 6. Saturation of Absorptions and Photoconductivity Due to Shallow Impurities in Semiconductors by High Power Far-Infrared Laser Beam | |
| K. MURO, N. YUTANI and S. NARITA | 593 |
| 7. Optical Bistability and Transphasor Action Using Semiconductor Materials (Invited) | |
| S. D. SMITH and D. A. B. MILLER | 597 |
| 8. Intensity Induced Interband Faraday Rotation in InSb: A New Nonlinear Magneto-Optical Effect | |
| R. B. DENNIS, H. A. MACKENZIE, S. D. SMITH, B. S. WHERRETT and D. VOGE | 605 |
| X: RECOMBINATION AND SPIN-DEPENDENT PROPERTIES |
|---|
| 1. Optical Detection of Exciton Resonances in Semiconductors (Invited) | |
| B. C. CAVENETT | 611 |
| 2. Optical Detection of Magnetic Resonance for D-A Recombination Luminescence in 6H-SiC | |
| G. D. WATKINS, LE SI DANG, K. M. LEE and W. J. CHOYKE | 619 |
| 3. Spin Relaxation of Conduction Electrons in p-Type Semiconductors | |
| V. I. SAFAROV and A. N. TITKOV | 623 |
| 4. Measurements of Electron Spin Polarization of GaAs Photocathode prior and after Emission into Vacuum | |
| G. LAMPEL and M. EMINYAN | 627 |
| 5. Optical Pumping Measurement of Valence Band Spin-Orbit Splitting in GaxIn1-xAsyP1-y | |
| C. HERMANN, G. LAMPEL and T. P. PEARSALL | 631 |
| 6. Spin-Dependent Scattering of Conduction Electrons by Magnetic Impurities | |
| A. WITTLIN, M. GRYNBERG, W. KNAP, J. KOSSUT and Z. WILAMOWSKI | 635 |
| 7. Photocurrent Induced by Optical Orientation of Free Carriers in Optically Active Crystals | |
| V. M. ASNIN, A. A. BAKUN, A. M. DANISHEVSKII, A. D. GALETSKAYA, E. L. IVCHENKO, G. E. PIKUS and A. A. ROGACHEV | 639 |
| 8. Calculation of Auger Coefficients for Silicon with Evaluation of the Overlap Integrals | |
| W. LOCHMANN and A. HAUG | 643 |
| XI: LATTICE DYNAMICS |
|---|
| 1. Lattice Dynamics and Structure of Semiconductors | |
| W. POROD, P. VOGL and G. BAUER | 649 |
| 2. Time Resolved Phonon Spectroscopy in Semiconductors | |
| D. VON DER LINDE, J. KUHL and E-H. ROSENGART | 653 |
| 3. Phonon Modes and Opitcal Properties of GaS under High Pressure | |
| A. POLIAN, J. M. BESSON and J. C. CHERVIN | 657 |
| 4. Localized Vibrations of Boron in Heavily Doped Si(B) | |
| MEERA CHANDRASEKHAR, H. R. CHANDRASEKHAR, M. H. GRIMSDITCH and M. CARDONA | 661 |
| 5. Disorder Activated Raman Scattering in InAs | |
| R. CARLES, N. SAINT-CRICQ, A. ZWICK, M. A. RENUCCI and J. B. RENUCCI | 665 |
| 6. Second Order Raman Scattering in Monoclinic and Trigonal Selenium | |
| P. J. CARROLL and J. S. LANNIN | 669 |
| XII: ELECTRON-PHONON INTERACTION AND ACOUSTIC PROPERTIES |
|---|
| 1. Polaron Mass at Finite Temperature | |
| M. SAITOH and K. ARISAWA | 675 |
| 2. The Screened Electron Phonon Interaction in Degenerate Semiconductors | |
| M. LAX and V. NARAYANAMURTI | 679 |
| 3. Multiphonon Structure of Optical Transitions to Impurity Resonance States | |
| K. PEUKER, D. SUISKY, R. BOYN and R. ENDERLEIN | 683 |
| 4. Phonon Induced Intersubband Resonance in an Inversion Layer | |
| S. KOMIYAMA, H. EYFERTH and J. P. KOTTHAUS | 687 |
| 5. Electronic Structure of Nickel Dichalcogenides | |
| P. KWIZERA, A. K. MABATAH, D. ADLER and M. S. DRESSELHAUS | 691 |
| 6. Resonance Raman Scattering and Induced Lattice Relaxation in Mixed Valence Chain Compound Wolffram's Red | |
| H. TANINO, J. NAKAHARA and K. KOBAYASHI | 695 |
| 7. Theory of Donor-and Acceptor-Bound Phonons | |
| M. A. KANEHISA, M. BALKANSKI and R. J. ELLIOTT | 699 |
| 8. Spatial and Temporal Dispersive Dielectric Function of Free Carriers: Analysis and Test of Two Models | |
| W. RICHTER, U. NOWAK and A. STAHL | 703 |
| 9. Propagation of Large Wavevector Acoustic Phonons in Semiconductors | |
| R. G. ULBRICH, V. NARAYANAMURTI and M. A. CHIN | 707 |
| 10. Surface Brillouin Scattering: Comparison of Resonant Elasto-Optic and Ripple Mechanisms | |
| W. C. CHANG, S. MISHRA and RALPH BRAY | 711 |
| 11. Giant Quantum Attenuation of Sound in Bismuth Below 1K | |
| T. FUKASE, S. MORITA, K. KAJIMURA, T. NAKANOMYO, Y. KOIKE and N. MIKOSHIBA | 715 |
| 12. Strongly Correlated State of Electron and Hole Landau Levels in Bismuth at Low Temperatures | |
| T. FUKAMI and S. MASE | 719 |
| XIII: PHASE TRANSITION |
|---|
| 1. The Structural Phase Transition in IV-VI Semiconductors (Invited) | |
| K. MURASE | 725 |
| 2. Ferroelectric Phase Transitions Induced by Electron-Phonon Interaction in Narrow-Gap Semiconductors | |
| P. KONSIN | 733 |
| 3. Ferroelectric Phase Transition in IV-VI Semiconductors | |
| A. BUSSMANN-HOLDER, H. BILZ and W. KRESS | 737 |
| 4. Magnetooptical Investigation of the Bandstructure of Pb1-xGexTe at the Structural Phase Transition (Oh→C3v) | |
| E. J. FANTNER, H. PASCHER, G. BAUER, R. DANZER and A. LOPEZ-OTERO | 741 |
| 5. Microscopic Description of Pressure Induced Phase Transitions in Zincblende Type Semiconductors | |
| K. MASCHKE and W. ANDREONI | 745 |
| 6. Raman Scattering and Metal-Insulator Transition in (V1-xCrx)2O3(0≤x≲0.03) | |
| C. TATSUYAMA, S. ICHIMURA and H. Y. FAN | 749 |
| 7. A Low Temperature Phase Transition in SbSBr | |
| T.INUSHIMA, K. UCHINOKURA, E. MATSUURA and A. OKAMOTO | 753 |
| 8. The Phase Transition in Single Crystals of α-AgSbS2 Induced by the External Electric Field | |
| V. VALIUKENAS, A. BRILINGAS, A. ORLIUKAS, V. SAMULIONIS and A. SAKALAS | 757 |
| XIV: NARROW GAP SEMICONDUCTORS |
|---|
| 1. Compositional Peculiarities of the Electronic Properties of Semiconducting Bi1-xSbx Alloys | |
| H. KRÜGER, B. FELLMUTH, R. RUDOLPH and R. HERRMANN | 763 |
| 2. Resonant and Nonresonant Polarons in Narrow Gap Semiconductors | |
| L. SWIERKOWSKI and W. ZAWADZKI | 767 |
| 3. Direct Evidence of Resonant Scattering and Hot Electrons Studies in HgTe | |
| C. VERIE, F. RAYMOND, J. RIOUX, A. KOZACKI and I. VACQUIE | 771 |
| 4. Experimental Evidence of the Resonant Acceptor Level E2 in Hg0.82Cd0.18 Te from Hall and SdH Measurements vs T, B, P on Various Annealed Samples | |
| M. AVEROUS, J. CALAS, S. CHARAR, C. FAU and A. RAYMOND | 775 |
| 5. Cyclotron and Other Resonances in HgSe and Hg1-xMnxSe | |
| K. PASTOR, M. JACZYNSKI and J. K. FURDYNA | 779 |
| 6. Negative Photoconductivity and Large Lattice Relaxation in Indium Doped Lead-Tin-Telluride | |
| C. M. PENCHINA, A. KLEIN and K. WEISER | 783 |
| 7. Magneto-Optical Oscillations of Cd3AS2 | |
| M. J. AUBIN, A. RAMBO and E. ARUSHANOV | 787 |
| 8. Deep Levels in PbSe | |
| K. LISCHKA, L. PALMETSHOFER, K. H. GRESSLEHNER and R. GRISAR | 791 |
| XV: MAGNETIC AND SEMIMAGNETIC SEMICONDUCTORS |
|---|
| 1. Semimagnetic Semiconductors (Invited) | |
| J. A. GAJ | 797 |
| 2. Acceptors in Semimagnetic Semiconductors | |
| A. MYCIELSKI and J. MYCIELSKI | 807 |
| 3. Magnetooptics in Semimagnetic Semiconducting Hg1-kMnkTe Mixed Crystals | |
| C. RIGAUX, G. BASTARD, Y. GULDNER, G. REBMANN, A. MYCIELSKI, J. K. FURDYNA and D. P. MULLIN | 811 |
| 4. The Relation between Magnetooptical and Magnetic Properties of Hg1-xMnxTe and Hg1-xMnxSe | |
| M. DOBROWOLSKA, W. DOBROWOLSKI, M. OTTO, T. DIETL and R. R. GALAZKA | 815 |
| 5. Optical Observation of a Magnetic Molecule in Cd1-xMnxTe | |
| A. GOLNIK, J. A. GAJ, M. NAWROCKI, R. PLANEL and C. BENOIT À LA GUILLAUME | 819 |
| 6. Giant Stokes Shift of Spin Flip Raman Scattering in the Semimagnetic Semiconductor Cd0.95Mn0.05Se | |
| M. NAWROCKI, R. PLANEL, G. FISHMAN and R. GALAZKA | 823 |
| 7. Electroreflectance in MnxCd1-xTe | |
| J. STANKIEWICZ, N. BOTTKA and W. GIRIAT | 827 |
| 8. Electron Concentration Dependence of Transport and Magnetic Properties in Narrow Gap Semiconductor EuB6 | |
| M. KASAYA, Y. ISIKAWA, K. TAKEGAHARA and T. KASUYA | 831 |
| 9. Magnetic Transitions in Degenerate Magnetic Semiconductors | |
| M. INOUE, H. K. FUN, M. FUKUOKA and H. YAGI | 835 |
| 10. Conduction Electron Spin Polarization in Magnetic Semiconductors | |
| J. SINKKONEN, S. ERÄNEN and T. STUBB | 839 |
| XVI: ONE-DIMENSIONAL MATERIALS |
|---|
| 1. Organic Superconductivity (Invited) | |
| D. JÉROME | 845 |
| 2. X-Ray Scattering Study of One-Dimensional Conductors TTF-TCNQ and its Family | |
| S. KAGOSHIMA | 857 |
| 3. Pinning of Fluctuating Charge-Density Waves in Quasi-One-Dimensional Conductors | |
| H. J. SCHULZ | 861 |
| 4. Optical Properties of Undoped and Doped Polyacetylene Films | |
| G. HARBEKE, H. KIESS, W. MEYER and D. BAERISWYL | 865 |
| 5. K0.3MoO3: A New One Dimensional Conductor with a Peierls Transition | |
| G. TRAVAGLINI, P. WACHTER, J. MARCUS and C. SCHLENKER | 869 |
| 6. NMR and EPR Studies on Quasi-One-Dimensional Conductor β-MxV2O5 | |
| H. NAGASAWA, T. TAKAHASHI, K. MARUYAMA and T. ERATA | 873 |
| XVII: TWO-DIMENSIONAL MATERIALS AND INTERCALATES |
|---|
| 1. Two-Dimensional Behaviour of Electrons in Bulk InSe from Shubnikov-de Haas Oscillations and Cyclotron Resonance | |
| J. C. PORTAL, R. J. NICHOLAS, E. KRESS-ROGERS, A. CHEVY, J. BESSON, J. GALIBERT and P. PERRIER | 879 |
| 2. Possibility of Two-Dimensional Conductance in 1T-TaS2 | |
| S. UCHIDA, K. OKAJIMA and S. TANAKA | 883 |
| 3. Metal-Nonmetal Transition in the Layer Compound 1T-Ta1-xTixS2 | |
| N. KOBAYASHI, T. SASAKI, Y. NISHIO and Y. MUTO | 887 |
| 4. Electrical and Magnetic Properties of Anderson Localized State in 1T-TaS2-xSex | |
| Y. ŌNUKI, R. INADA and S. TANUMA | 891 |
| 5. Electron-Phonon Interaction and Conductivity of a Charged Graphite Layer | |
| L. PIETRONERO and S. STRÄSSLER | 895 |
| 6. Electronic Band Structure of Lithium-Graphite Intercalation Compound C6Li | |
| T. OHNO | 899 |
| 7. X-Ray and Raman Studies of Phase Transitions in Intercalated Graphite (Invited) | |
| S. A. SOLIN | 903 |
| 8. The Interrelation of Shubnikov-de Haas, Magnetoreflection and Transport Properties of Alkali Metal Donor Intercalation Compounds | |
| M. S. DRESSELHAUS, G. DRESSELHAUS, M. SHAYEGAN and T. C. CHIEU | 911 |
| 9. Band Structure Model and Optical Properties in Graphite Acceptor Compounds | |
| J. BLINOWSKI, Nguyen Hy HAU, C. RIGAUX and J. P. VIEREN | 915 |
| 10. AsF5-Intercalated Graphite: Self-Consistent Band Structure, Optical Properties and Structural Energy | |
| G. CAMPAGNOLI and E. TOSATTI | 919 |
| 11. Fermi Surface and Band Structure of Graphite Intercalation Compounds | |
| I. ROSENMAN, F. BATALLAN, C. SIMON and H. FUZELLIER | 923 |
| XVIII: SPACE CHARGE LAYERS |
|---|
| 1. Many-Body Effects is the Space Charge Layers (Invited) | |
| T. ANDO | 929 |
| 2. Spectroscopy of Quasi-Two-Dimensional Space Charge Layers (Invited) | |
| J. P. KOTTHAUS | 937 |
| 3. Theory of the Electronic Properties of N-Channel Inversion Layers on Narrow-Gap Semiconductors | |
| Y. TAKADA, K. ARAI, N. UCHIMURA and Y. UEMURA | 947 |
| 4. Resonant Raman Scattering at InAs Surfaces in MOS Junctions | |
| L. Y. CHING, E. BURSTEIN, S. BUCHNER and H. H. WIEDER | 951 |
| 5. Developments in Subband Spectroscopy | |
| H. R. CHANG, H. REISINGER, F. SCHÄFFLER, J. SCHOLZ, K. WIESINGER and F. KOCH | 955 |
| 6. Valley Degeneracy and Intersubband Spectroscopy in (111) and (110) Si Inversion Layers | |
| T. COLE and B. D. MCCOMBE | 959 |
| 7. Exchange-Correlation Effects in Silicon Inversion Layers: Valley Occupancy Phase Transitions | |
| W. L. BLOSS, S. C. YING, J. J. QUINN, T. COLE and B. D. MCCOMBE | 963 |
| 8. Magnetic Breakdown in the Tipped Si 'Superlattice' | |
| T. G. MATHESON and R. J. HIGGINS | 967 |
| 9. Many-Body Enhancement of the Valley Splitting in Si-MOS FETs at Finite Temperatures: Reexamination of the 2-Dimensionality of the System and Critical Temperatures for the Valley Splitting | |
| H. RAUH and R. KÜMMEL | 971 |
| 10. Valley Splitting and Valley Degeneracy Factors in n-Type Silicon (110) and (111) Inversion Layers | |
| M. ROOS and H. KÖHLER | 975 |
| 11. Transport Properties of a Two-Dimensional Electron Gas at the Surface of InP-Field Effect Transistors | |
| K. v. KLITZING, T. ENGLERT, E. BANGERT and D. FRITZSCHE | 979 |
| 12. Negative Magnetoresistance in a Two-Dimensional Random System of Si-MOS Inversion Layers | |
| Y. KAWAGUCHI and S. KAWAJI | 983 |
| 13. Conductivity and Hall Effects in Two-Dimensional Disordered Systems | |
| H. FUKUYAMA | 987 |
| 14. Mechanisms of Superconductivity at Semiconductor Interfaces | |
| W. HANKE and M. J. KELLY | 991 |
| XIX: SUPERLATTICE |
|---|
| 1. Semiconductor-Semimetal Transitions in InAs-GaSb Superlattices (Invited) | |
| L. L. CHANG | 997 |
| 2. Optical Studies of InAs-GaSb Superlattices | |
| P. VOISIN, Y. GULDNER, J. P. VIEREN, M. VOOS, C. BENOIT A LA GUILLAUME, N. J. KAWAI, L. L. CHANG and L. ESAKI | 1005 |
| 3. Electroreflectance Study of Semiconductor Superlattices | |
| E. E. MENDEZ, C.-A. CHANG, L. L. CHANG, L. ESAKI and F. H. POLLAK | 1009 |
| 4. Modulation Doping of Semiconductor Superlattices and Interfaces (Invited) | |
| H. L. STÖRMER | 1013 |
| 5. Phonon Folding and Anisotropy in GaAs-AlAs Superlattices | |
| R. MERLIN, C. COLVARD, M. V. KLEIN, H. MORKOC, A. C. GOSSARD and A. Y. CHO | 1021 |
| 6. Light Scattering Spectroscopy of Two Dimensional Electron Gases in Semiconductors | |
| A. PINCZUK, J. M. WORLOCK, H. L. STÖRMER, R. DINGLE, W. WIEGMANN and A. C. GOSSARD | 1025 |
| 7. Far Infrared Emission from 2D Electrons at the GaAs-AlxGa1-xAs Interface | |
| E. GORNIK, R. SCHAWARZ, D. C. TSUI, A. C. GOSSARD and W. WIEGMANN | 1029 |
| XX: SURFACE AND INTERFACE |
|---|
| 1. Reconstruction at Semiconductor Surfaces (Invited) | |
| D. J. CHADI | 1035 |
| 2. Electronic Stucture of Ordered Metal Overlayers on Si (111) Surfaces | |
| G. V. HANSSON, R. Z. BACHRACH, R. S. BAUER and P. CHIARADIA | 1043 |
| 3. Angle Resolved Photoemission from Surface States on Si (111) Reconstructed Surfaces | |
| G. M. GUICHAR, F. HOUZAY, R. PINCHAUX and Y. PÉTROFF | 1047 |
| 4. Self-Consistent DV-Xα Cluster Calculation of Electronic Structure of the Si (111)-7×7 Model Surface | |
| K. NAKAMURA, T. HOSHINO, M. TSUKADA, S. OHNISHI and S. SUGANO | 1051 |
| 5. Chemical Pseudopotential Theory of Surface Reconstruction | |
| K. SUZUKI and T. HOSHINO | 1055 |
| 6. Electrical Conductivity of Germanium Clean Surface | |
| B. M. VUL, E. I. ZAVARITSKAYA and I. I. IVANCHIK | 1059 |
| 7. A Photoemission Study of Al/Si Interface Using Synchrotron Radiation | |
| K. L. I. KOBAYASHI, F. GERKEN, J. BARTH and C. KUNZ | 1063 |
| 8. Initial Stage of Metal/Si Interface Formation at Room Temperature | |
| K. OKUNO, M. IWAMI and A. HIRAKI | 1067 |
| 9. The Electronic Properties of the Si (111)-Transition Metal Interfaces | |
| I. ABBATI, L. BRAICOVICH, B. DE MICHELIS, O. BISI, C. CALANDRA, U. DEL PENNINO and S. VALERI | 1071 |
| 10. Direct Determination of the Density of Localized States at Metal-Cleaved Si (111) Interfaces | |
| P. MURET and A. DENEUVILLE | 1075 |
| 11. Fermi Level Pinning at 3-5 Semiconductor Interfaces (Invited) | |
| W. E. SPICER, P. SKEATH, C. Y. SU and I. LINDAU | 1079 |
| 12. Photoemission Studies of Atomic Redistribution at Compound Semiconductor Interfaces | |
| L. J. BRILLSON, C. F. BRUCKER, G. MARGARITONDO, J. SLOWIK and N. G. STOFFEL | 1089 |
| 13. Cluster Model Calculations for Electronic States of Defects and Group-III Metal Atoms on the GaSb, GaAs and InP (110) Surfaces | |
| M. NISHIDA | 1093 |
| 14. Pseudopotential Calculation of the Electronic Structure at the Cleavage Surface of GaP | |
| C. M. BERTONI, F. MANGHI and C. CALANDRA | 1097 |
| 15. Raman-, LEED- and Auger Spectroscopy of Clean and Oxidized (110)–GaAs–Surfaces | |
| H. J. STOLZ and G. ABSTREITER | 1101 |
| 16. Electronic Structure of a Vacuum Cleaved ZnTe (110) Surface Studied by Electron Spectroscopy | |
| K. ASANO, Y. SUDA, M. KOMATSU, A. EBINA and T. TAKAHASHI | 1105 |
| 17. Optical Detection of Surface States in GaAs (110) at Energies Above the Gap | |
| P. CHIARADIA, G. CHIAROTTI, F. CICCACCI, R. MEMEO, S. NANNARONE, P. SASSAROLI and S. SELCI | 1109 |
| 18. The Defect Structure of InSb (110) Surfaces | |
| E. W. KREUTZ, E. RICKUS and N. SOTNIK | 1113 |
| 19. Relaxation of Polar Ge-GaAs (100) Interfaces: Self-consistent Calculations of the Total Energy | |
| K. KUNC and R. M. MARTIN | 1117 |
| 20. Electronic Properties of Segregated Ge-(110) GaAs Overlayer Systems | |
| A. MAZUR, J. POLLMANN and M. SCHMEITS | 1121 |
| 21. Photocapacitance Transient Spectroscopy Study of Compound Semiconductor-Insulator Interface States | |
| H. HASEGAWA and T. SAWADA | 1125 |
| 22. Defect States at the Semiconductor-Insulator Interface: A Chemical Bonding Approach | |
| G. LUCOVSKY | 1129 |
| 23. Local-Field and Excitonic Effects on Optical Properties of Crystal Surfaces | |
| R. DEL SOLE and E. FIORINO | 1133 |
| XXI: AMORPHOUS SEMICONDUCTORS |
|---|
| 1. Electronic Properties of Amorphous As and P (Invited) | |
| E. A. DAVIS | 1139 |
| 2. Structure and Energy Level Scheme of Amorphous As-Se System | |
| T. ARAI, S. ONARI, T. MORI, T. KITAHARA and K. YAMAMOTO | 1147 |
| 3. Thermally and Photo-Induced Changes in the Valence States of Amorphous Chalcogenides Studied by UPS | |
| T. TAKAHASHI and Y. HARADA | 1151 |
| 4. Nuclear Quadrupole Resonance Probes of Structural and Photostructural Properties of Glassy As2Se3, As2S3 and As2O3 | |
| P. C. TAYLOR, U. STROM, W. M. PONTUSCHKA and D. J. TREACY | 1155 |
| 5. Gap States in Doped Amorphous Selenium | |
| Y. TAKASAKI, T. UDA and E. YAMADA | 1159 |
| 6. The Non-Metal-Metal Transition in As2Se3 with the Addition of Some 3d Elements | |
| Y. SAWAN, F. WAKIM, M. ABU-ZEID and M. EL-GABALY | 1163 |
| 7. Demonstration of Schubnikov-de Haas Effect in a Thin Film of Amorphous Cd3As2 | |
| J.-C. PORTAL, P. R. WALLACE, W. ZDANOWICZ and L. ZDANOWICZ | 1167 |
| 8. Formation and Raman Scattering of Amorphous Iodine | |
| B. V. SHANABROOK and J. S. LANNIN | 1171 |
| 9. Kinds of Disorder and the Electronic Structures of Tetrahedral Amorphous Semiconductors | |
| M. H. COHEN, H. FRITZSCHE, J. SINGH and F. YONEZAWA | 1175 |
| 10. Interband Absorption Spectra of Disordered Semiconductors in the Coherent Potential Approximation | |
| S. ABE | 1179 |
| XXII: AMORPHOUS SILICON |
|---|
| 1. Structure and Lattice Dynamics of Hydrogenated Amorphous Silicon | |
| A. MACKINNON | 1185 |
| 2. Compositional Anisotropy and Microstructure of a-Si:H | |
| R. J. NEMANICH, D. K. BIEGELSEN and M. P. ROSENBLUM | 1189 |
| 3. Pulsed NMR Studies of Hydrogenated Amorphous Silicon (a-Si:H) | |
| P. C. TAYLOR and W. E. CARLOS | 1193 |
| 4. The Influence of Structural Inhomogeneity on the Conduction Band Transport in a-Si:H Alloys | |
| D. A. ANDERSON and W. PAUL | 1197 |
| 5. Guided Wave Optical Spectroscopy of a-Si:H. Determination of Absorption Spectrum Between 0.8 and 1.9 eV | |
| M. OLIVIER, J. C. PEUZIN and A. CHENEVAS-PAULE | 1201 |
| 6. Study of In-Gap States in Hydrogenated Amorphous Silicon by Thermally and Optically Stimulated Current Measurements | |
| A. CHENEVAS-PAULE | 1205 |
| 7. Internal Electric Fields in Hydrogenated Amorphous Silicon | |
| W. REHM, R. FISCHER, J. BEICHLER and W. SIEBERT | 1209 |
| 8. A Study of Geminate Recombination Process in Terms of p-i-n Basis Drift Type Photovoltaic Effects | |
| H. OKAMOTO, T. YAMAGUCHI and Y. HAMAKAWA | 1213 |
| 9. The Lifetime of Injected Carriers in Amorphous Silicon Junction Devices | |
| A. J. SNELL, W. E. SPEAR and P. G. LE COMBER | 1217 |
| 10. Ion Implantation and Hydrogen Profiling in Amorphous Silicon Films and p-n Junctions | |
| P. G. LE COMBER, W. E. SPEAR, S. KALBITZER, G. MÜLLER and F. DEMOND | 1221 |
| 11. Trap Controlled Dispersive Transport by Transient Photoresponse in Doped a-Si:H | |
| J. M. HVAM and M. H. BRODSKY | 1225 |
| 12. Physical Properties of Phosphorus Doped Low-Pressure CVD Amorphous Silicon | |
| G. HARBEKE, A. E. WIDMER and J. STUKE | 1229 |
| 13. Doping Effects in CVD Amphorphous Silicon: A Study by Light-Induced ESR | |
| A. FRIEDERICH and D. KAPLAN | 1233 |
| 14. ESR in Heavily Doped CVD Amorphous Silicon Films | |
| S. HASEGAWA, T. SHIMIZU and M. HIROSE | 1237 |
| 15. Infrared and Photoemission Spectra of Amorphous Fluorinated Silicon | |
| L. LEY, H. R. SHANKS, C. J. FANG, K. J. GRUNTZ and M. CARDONA | 1241 |
| 16. Chemical Bonding Structure of Amorphous Silicon-Fluorine Alloys | |
| T. SHIMADA and Y. KATAYAMA | 1245 |
| 17. Electronic and Vibrational Properties of Glow-Discharge Amorphous Si:F:H | |
| R. TSU, M. IZU, V. CANNELLA, S. R. OVSHINSKY, G.-J. JAN and F. H. POLLAK | 1249 |
| 18. A Heat-Resisting New Amorphous-Silicon | |
| H. MATSUMURA, Y. NAKAGOME and S. FURUKAWA | 1253 |
| 19. Study of the Amorphous Silicon-Fluorine Alloy and the Doping Effect of Boron on its Conductivity | |
| DAI GUO-CAI, Song XUE-WEN and Chen YOU-PENG | 1257 |
| 20. Structural Properties of Glow Discharge a-Si1-xGex: H Alloys as Revealed by Infrared Absorption and Hydrogen Evolution Techniques | |
| D. K. PAUL, B. VON ROEDERN, S. OGUZ, J. BLAKE and W. PAUL | 1261 |
| 21. Silicidel Formation at the Interface of Pd on Amorphous and Crystalline Si | |
| C. C. TSAI, R. J. NEMANICH and T. W. SIGMON | 1265 |
| XXIII: ION IMPLANTATION AND LASER ANNEALING |
|---|
| 1. Crystal Growth and Impurity Incorporation by Transient Laser and Electron Beam Heating of Semiconductors (Invited) | |
| W. L. BROWN | 1271 |
| 2. Laser Annealing of Ion-Implanted Semiconductors (Invited) | |
| I. B. KHAIBULLIN, E. I. SHTYRKOV and M. M. ZARIPOV | 1281 |
| 3. Laser Annealing of Silicon: Strain and Perfection of Epitaxially Reconstructed Surfaces | |
| H. BAUMGART, G. A. ROZGONYI, R. UEBBING and F. PHILLIPP | 1291 |
| 4. Raman Spectroscopy of Amorphous-Crystalline Phase Transition Induced by Laser Annealing | |
| J. F. MORHANGE, G. KANELLIS and M. BALKANSKI | 1295 |
| 5. Time-Resolved Conductivity and Reflectivity during Laser Annealing of Semiconductors | |
| M. YAMADA, H. KOTANI, K. YAMAZAKI, K. YAMAMOTO and K. ABE | 1299 |
| 6. Dynamic Behavior of Picosecond Pulsed Laser Annealing in Ion-Implanted Si | |
| K. MURAKAMI, M. KAWABE, K. GAMO, S. NAMBA and Y. AOYAGI | 1303 |
| CLOSING SESSION |
|---|
| 1. Closing Address | |
| Y. UEMURA | 1309 |
