We are happy to announce the Third (2022) Fumiko Yonezawa Memorial Award winners.
|Natsumi Iwata||Keiko Takase|
※In the order of the Japanese syllabary/titles omitted
|Full Name||Natsumi Iwata|
|Affiliation||Associate Professor, Institute for Advanced Co-Creation Studies, Osaka University|
|Achievement||Theoretical study of high energy density plasma dynamics driven by intense light|
Irradiating high-power lasers in the relativistic intensity level ionizes a material, thereby creating a high-energy density plasma. In such situations, the strong laser radiation pressure of giga-bar level pushes the irradiated plasma surface, where electron acceleration by lasers in the relativistic regime and heating of the high-temperature plasma occur simultaneously. It is an important issue in plasma physics to explore phenomena in such extreme conditions.
|Full Name||Keiko Takase|
|Affiliation||NTT Basic Research Laboratories, Senior Research Scientist|
|Achievement||Research on quantum transport and control of spin-orbit interaction in novel semiconductor materials|
Dr. Takase has been both experimentally and theoretically studying the quantum properties of quantum effect devices in semiconductor materials such as graphene and III-V semiconductor nanowires. In graphene research, she succeeded in fabricating wafer-scale epitaxial graphene on a silicon carbide (SiC) substrate. Transport spectroscopy of the fabricated graphene field effect transistor (FET) on SiC and the theoretical model elucidated the quantum properties of epitaxial graphene. Then, Dr. Takase succeeded in fabricating FETs using III-V semiconductor nanowires such as InAs and InSb in collaboration with a materials scientist of nanowire growth using the MOVPE (Metalorganic vapor phase epitaxy). Because of a large spin-orbit interaction these semiconductors are expected to have potential applications in the field of spintronics. Measurements in extreme environments such as low temperature and strong magnetic field and theoretical calculations revealed that the FET fabricated by Takase, et al. can efficiently control a large spin-orbit interaction at a low gate voltage. It is expected to lead to energy saving of FET in the future.